CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  HALF BRIDGE

CURRENT - COLLECTOR (IC) (MAX):  80A

CURRENT - COLLECTOR CUTOFF (MAX):  250ΜA

EXPANDED DESCRIPTION:  IGBT MODULE NPT HALF BRIDGE 1200V 80A 463W CHASSIS MOUNT MTP

IGBT TYPE:  NPT

INPUT:  STANDARD

INPUT CAPACITANCE (CIES) @ VCE:  8.28NF @ 30V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SEMICONDUCTOR DIODES DIVISION

MANUFACTURER PART NUMBER:  VS-40MT120UHAPBF

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  NO

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  12-MTP MODULE

POWER - MAX:  463W

STANDARD PACKAGE:  15

SUPPLIER DEVICE PACKAGE:  MTP

VCE(ON) (MAX) @ VGE, IC:  4.91V @ 15V, 80A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1200V