CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  HALF BRIDGE

CURRENT - COLLECTOR (IC) (MAX):  100A

CURRENT - COLLECTOR CUTOFF (MAX):  700ΜA

DETAILED DESCRIPTION:  IGBT MODULE NPT HALF BRIDGE 600V 100A 347W CHASSIS MOUNT MTP

IGBT TYPE:  NPT

INPUT:  STANDARD

INPUT CAPACITANCE (CIES) @ VCE:  8NF @ 30V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SEMICONDUCTOR DIODES DIVISION

MANUFACTURER PART NUMBER:  VS-70MT060WHTAPBF

MANUFACTURER STANDARD LEAD TIME:  17 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  NO

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  12-MTP MODULE

POWER - MAX:  347W

STANDARD PACKAGE:  105

SUPPLIER DEVICE PACKAGE:  MTP

VCE(ON) (MAX) @ VGE, IC:  3.4V @ 15V, 140A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  600V