CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  SINGLE

CURRENT - COLLECTOR (IC) (MAX):  200A

CURRENT - COLLECTOR CUTOFF (MAX):  1MA

FAMILY:  TRANSISTORS - IGBTS - MODULES

INPUT:  STANDARD

INPUT CAPACITANCE (CIES) @ VCE:  7.43NF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SEMICONDUCTOR DIODES DIVISION

MANUFACTURER PART NUMBER:  VS-GB100LP120N

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  NO

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  INT-A-PAK

POWER - MAX:  658W

STANDARD PACKAGE:  24

SUPPLIER DEVICE PACKAGE:  INT-A-PAK

VCE(ON) (MAX) @ VGE, IC:  1.8V @ 15V, 100A (TYP)

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1200V