CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  SINGLE

CURRENT - COLLECTOR (IC) (MAX):  149A

CURRENT - COLLECTOR CUTOFF (MAX):  250ΜA

DETAILED DESCRIPTION:  IGBT MODULE NPT SINGLE 1200V 149A 862W CHASSIS MOUNT SOT-227

IGBT TYPE:  NPT

INPUT:  STANDARD

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SEMICONDUCTOR DIODES DIVISION

MANUFACTURER PART NUMBER:  VS-GB90DA120U

MANUFACTURER STANDARD LEAD TIME:  17 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  NO

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-227-4, MINIBLOC

POWER - MAX:  862W

STANDARD PACKAGE:  10

SUPPLIER DEVICE PACKAGE:  SOT-227

VCE(ON) (MAX) @ VGE, IC:  3.8V @ 15V, 75A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1200V